Modeling of the transient interstitial diffusion of implanted atoms during low-temperature annealing of silicon substrates
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference80 articles.
1. Boron diffusion in extrinsically doped crystalline silicon
2. Rapid annealing and the anomalous diffusion of ion implanted boron into silicon
3. Enhanced tail diffusion of ion implanted boron in silicon
4. Implantation damage and the anomalous transient diffusion of ion‐implanted boron
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