1. Velichko OI. A set of equations of radiation-enhanced diffusion of ion-implanted impurities. In: Danilovich II, Koval’ AG, Labunov VA et al. editors. Proceedings of VII Int. Conf. “Vzaimodeistvie Atomnyh Chastits s Tverdym Telom (Interaction of Atomic Particles with Solid)” Minsk, Belarus 1984;2:180–1 (in Russian).
2. Velichko OI. A set of equations for modeling of radiation-enhanced diffusion of ion-implanted dopants. In: Radiotehnika i Elektronika Republican interdepartmental volume of papers Minsk Belarus 1985;48:151–3 (in Russian).
3. Enhanced “tail” diffusion of phosphorus and boron in silicon;Morehead;Appl Phys Lett,1986
4. Modeling of dopant diffusion in silicon: an effective diffusivity approach including point-defect couplings;Mathiot;J Appl Phys,1991
5. TSUPREM-4 User's Manual, Version 2000.4. Fremont CA: Avant! Corp.; 2000.