Activation energies for Te and Be in metamorphically grown AlSb and InxAl1−xSb layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2032591
Reference11 articles.
1. 2.5–3.5 μm optically pumped GaInSb/AlGaInSb multiple quantum well lasers grown on AlInSb metamorphic buffer layers
2. Room‐temperature 2.78 μm AlGaAsSb/InGaAsSb quantum‐well lasers
3. Room-Temperature 2.81->tex<$muhboxm$>/tex<Continuous-Wave Operation of GaInAsSb–AlGaAsSb Laser
4. 2.7‐μm InGaAsSb/AlGaAsSb laser diodes with continuous‐wave operation up to −39 °C
5. Room-temperature 2.5 μm InGaAsSb/AlGaAsSb diode lasers emitting 1 W continuous waves
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