Room-Temperature 2.81->tex<$muhboxm$>/tex<Continuous-Wave Operation of GaInAsSb

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Room-Temperature 2.81->tex<$muhboxm$>/tex<Continuous-Wave Operation of GaInAsSb–AlGaAsSb Laser

Published:2004-02 Issue:2 Volume:16 Page:383-385
ISSN:1041-1135
Container-title:IEEE Photonics Technology Letters
language:en
Short-container-title:IEEE Photon. Technol. Lett.

Author:

Grau M.,Lin C.,Amann M.-C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/68/28329/01266431.pdf?arnumber=1266431

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-Brightness 2.X μm Semiconductor Lasers;NATO Science for Peace and Security Series B: Physics and Biophysics;2008

2. HIGH POWER TYPE-I GASB-BASED LASERS;Frontiers in Electronics;2006-08

3. Recombination processes in midinfrared InGaAsSb diode lasers emitting at 2.37μm;Applied Physics Letters;2006-07-31

4. Continuous-wave operation of GaInAsSb-GaSb type-II ridge waveguide lasers emitting at 2.8 /spl mu/m;IEEE Photonics Technology Letters;2006-07

5. HIGH POWER TYPE-I GASB-BASED LASERS;International Journal of High Speed Electronics and Systems;2006-06

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