Recombination processes in midinfrared InGaAsSb diode lasers emitting at 2.37μm
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2243973
Reference17 articles.
1. Room-Temperature 2.81->tex<$muhboxm$>/tex<Continuous-Wave Operation of GaInAsSb–AlGaAsSb Laser
2. GaSb-based mid-infrared 2–5 μm laser diodes
3. Low threshold room-temperature continuous-wave operation of 2.24–3.04 μm GaInAsSb/AlGaAsSb quantum-well lasers
4. Room-temperature low-threshold low-loss continuous-wave operation of 2.26 μm GaInAsSb/AlGaAsSb quantum-well laser diodes
5. Low-threshold GaInAsSb/AlGaAsSb quantum well laser diodes emitting near 2.3 µm
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