Metamorphic high electron mobility Te-doped AlInSb/GaInSb heterostructures on InP (001)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2978365
Reference11 articles.
1. Antimonide-based compound semiconductors for electronic devices: A review
2. Resonant tunneling in AlSb/InAs/AlSb double‐barrier heterostructures
3. InAlAsSb∕InGaSb double heterojunction bipolar transistor
4. Electron concentrations and mobilities in AlSb/InAs/AlSb quantum wells
5. The family (InAs, GaSb, AlSb) and its heterostructures: a selective review
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