Deep-level transient spectroscopy of interfacial states in “buffer-free” p-i-n GaSb/GaAs devices-Reference-Cited by-同舟云学术

Deep-level transient spectroscopy of interfacial states in “buffer-free” p-i-n GaSb/GaAs devices

Published:2013-10-07 Issue:13 Volume:114 Page:134507
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Aziz Mohsin,Ferrandis Philippe,Mesli Abdelmadjid,Hussain Mari Riaz,Francisco Felix Jorlandio,Sellai Azzouz,Jameel Dler,Al Saqri Noor,Khatab Almontaser,Taylor David,Henini Mohamed

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4824378

Reference29 articles.

1. Distribution of dislocations in GaSb and InSb epilayers grown on GaAs (001) vicinal substrates

2. Metamorphic high electron mobility Te-doped AlInSb/GaInSb heterostructures on InP (001)

3. GaSb∕GaAs type II quantum dot solar cells for enhanced infrared spectral response

4. Hole storage in GaSb/GaAs quantum dots for memory devices

5. The physics and technology of gallium antimonide: An emerging optoelectronic material

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