Time‐of‐flight measurement of electron velocity in an In0.52Al0.48As/In0.53Ga0.47As /In0.52Al0.48As double heterostructure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103580
Reference9 articles.
1. Alloy scattering and high field transport in ternary and quaternary III–V semiconductors
2. The electron velocity-field characteristic for n-In0.53Ga0.47As at 300 K
3. Velocity field characteristics of minority carriers (electrons) inp‐In0.53Ga0.47As
4. Measurement of the Electron Velocity-Field Characteristics in Germanium Using a New Technique
5. Time‐of‐flight measurement for electron velocity inp‐AlGaAs/GaAs/AlGaAs at a high field
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