Time‐of‐flight measurement for electron velocity inp‐AlGaAs/GaAs/AlGaAs at a high field
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102047
Reference7 articles.
1. High‐field drift velocity of electrons at the Si–SiO2interface as determined by a time‐of‐flight technique
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3. Electron velocity at high electric fields in AlGaAs/GaAs modulation-doped heterostructures
4. Absolute Measurement of the Electron Velocity-Field Characteristic of InSb
5. Transport Properties of GaAs
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Comparison of 80-200 nm gate length Al/sub 0.25/GaAs/GaAs/(GaAs:AlAs), Al/sub 0.3/GaAs/In/sub 0.15/GaAs/GaAs, and In/sub 0.52/AlAs/In/sub 0.65/GaAs/InP HEMTs;IEEE Transactions on Electron Devices;1995
2. GaAs-Based and InP-Based Heterostructure Bipolar Transistors;Semiconductors and Semimetals;1994
3. High‐field electron velocity measurement in GaAs/AlGaAs multiple‐quantum wells;Applied Physics Letters;1992-09-28
4. Effects of heavy doping on numerical simulations of gallium arsenide bipolar transistors;Solid-State Electronics;1992-06
5. High‐field electron‐transport properties in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As double heterostructure;Journal of Applied Physics;1991-04
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