GaAs-Based and InP-Based Heterostructure Bipolar Transistors
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Elsevier
Reference142 articles.
1. Electron mobility inp‐GaAs by time of flight
2. Submicron AlGaAs/GaAs heterostructure bipolar transistor with high gain
3. GaAlAs/GaAs heterojunction bipolar transistors: issues and prospects for application
4. LPMOCVD growth of C doped GaAs layers and AlGaAs/GaAs heterojunction bipolar transistors
5. p-n-p heterojunction bipolar transistors with buried subcollector layers
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