High‐field electron‐transport properties in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As double heterostructure
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.348461
Reference15 articles.
1. W-band low-noise InAlAs/InGaAs lattice-matched HEMTs
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5. Monte Carlo study of hot-electron transport in an InGaAs/InAlAs single heterostructure
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1. Physical device modelling of emitter–base junction of In0.52Al0.48As/In0.53Ga0.47As-based SHBTs;International Journal of Electronics;2019-05-05
2. Nonlinear characteristics of T-branch junctions: Transition from ballistic to diffusive regime;Applied Physics Letters;2008-08-04
3. An Analytical Model and Measurement on the InAlAs/InGaAs High-Electron-Mobility Transistor with Oxidized InAlAs Gate;2007 IEEE 19th International Conference on Indium Phosphide & Related Materials;2007-05
4. Scaling of pseudomorphic high electron mobility transistors to decanano dimensions;Solid-State Electronics;2002-05
5. Electroluminescence of InAlAs/InGaAs HEMTs lattice-matched to InP substrates;IEEE Electron Device Letters;1995-11
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