Physical device modelling of emitter–base junction of In0.52Al0.48As/In0.53Ga0.47As-based SHBTs-Reference-Cited by-同舟云学术

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Physical device modelling of emitter–base junction of In0.52Al0.48As/In0.53Ga0.47As-based SHBTs

Published:2019-05-05 Issue:11 Volume:106 Page:1710-1725
ISSN:0020-7217
Container-title:International Journal of Electronics
language:en
Short-container-title:International Journal of Electronics

Author:

Tanveer M.¹,Tauqeer T.¹²,Mehmood H.¹,Butt H.T.¹,Sexton J.³,Missous M.³

Affiliation:

1. Department of Electrical Engineering, National University of Sciences and Technology (NUST), Islamabad, Pakistan

2. Department of Electrical Engineering, Information Technology University (ITU), Lahore, Pakistan

3. School of Electrical and Electronic Engineering, The University of Manchester, Manchester, UK

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/00207217.2019.1611944

Reference26 articles.

1. InAlAs/InGaAs HBTs with simultaneously high values of F/sub /spl tau// and F/sub max/ for mixed analog/digital applications

2. Simulation and design of InAlAs/InGaAs pnp heterojunction bipolar transistors

3. Emitter injection and collector current ideality in abrupt heterojunction AlInAs/GaInAs HBTs

4. A comparison between Monte Carlo and extended drift-diffusion models for abrupt InP/InGaAs HBTs

5. Physical modeling based on hydrodynamic simulation for the design of InGaAs/InP double heterojunction bipolar transistors

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