Physical modeling based on hydrodynamic simulation for the design of InGaAs/InP double heterojunction bipolar transistors-Reference-Cited by-同舟云学术

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Physical modeling based on hydrodynamic simulation for the design of InGaAs/InP double heterojunction bipolar transistors

Published:2012-05 Issue:5 Volume:21 Page:058501
ISSN:1674-1056
Container-title:Chinese Physics B
language:
Short-container-title:Chinese Phys. B

Author:

Ge Ji,Liu Hong-Gang,Su Yong-Bo,Cao Yu-Xiong,Jin Zhi

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Reference20 articles.

1. Submicron scaling of HBTs

2. Nonequilibrium electron transport in HBTs

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2. Noise analysis of double gate composite InAs based HEMTs for high frequency applications;Microsystem Technologies;2020-07-22

3. An Extensive Simulation Study of Gate Underlap Influence on Device Performance of Surrounding Gate In0.53Ga0.47As/InP Hetero Field Effect Transistor;Nanoscience & Nanotechnology-Asia;2020-02-25

4. Optimization of enhancement mode P-type Mg-doped In0.2Ga0.8N cap gate DH-HEMT for low-loss high power efficient boost converter circuits;Materials Science in Semiconductor Processing;2019-11

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