MBE growth of InGaAs-InGaAlAs heterostructures for applications to high-speed devices
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference52 articles.
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1. Growth mechanism and optical properties of InGaAs/GaAsSb Su-perlattice structures;Science China Physics, Mechanics & Astronomy;2014-10-17
2. Raman investigation of molecular beam epitaxy grown InGaAlAs epilayers lattice matched to InP for low Al concentrations;Journal of Applied Physics;1998-02-15
3. Simulation and design of InAlAs/InGaAs pnp heterojunction bipolar transistors;IEEE Transactions on Electron Devices;1998
4. An investigation of the properties of intimate InInxGa1-xAs(100) interfaces formed at room and cryogenic temperatures;Applied Surface Science;1998-01
5. Photoemission study of the formation of intimate In–InGaAs(100) contacts at room and cryogenic temperatures;Journal of Applied Physics;1997-06-15
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