An investigation of the properties of intimate InInxGa1-xAs(100) interfaces formed at room and cryogenic temperatures-Reference-Cited by-同舟云学术

An investigation of the properties of intimate InInxGa1-xAs(100) interfaces formed at room and cryogenic temperatures

Published:1998-01 Issue: Volume:123-124 Page:501-507
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Cammack D.S.,McGregor S.M.,McChesney J.J.,Clark S.A.,Dunstan P.R.,Burgess S.R.,Wilks S.P.,Peiró F.,Ferrer J.-C.,Cornet A.,Morante J.R.,Kestle A.,Westwood D.I.,Elliott M.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference11 articles.

1. Al0.48In0.52As/Ga0.47In0.53As/Al0.48In0.52As double‐heterostructure lasers grown by molecular‐beam epitaxy with lasing wavelength at 1.65 μm

2. MBE growth of InGaAs-InGaAlAs heterostructures for applications to high-speed devices

3. Improvements to the Schottky barrier heights of intimate metal-InGaAs contacts by low temperature metallisation

4. The formation of interfaces on GaAs and related semiconductors: A reassessment

5. Formation of interfaces between In and Au and GaAs(100) studied with soft-x-ray photoemission spectroscopy

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