Formation of interfaces between In and Au and GaAs(100) studied with soft-x-ray photoemission spectroscopy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.45.1273/fulltext
Reference47 articles.
1. Low-temperature formation of metal/molecular-beam epitaxy-GaAs(100) interfaces: Approaching ideal chemical and electronic limits
2. Interface states and Schottky barrier formation at metal/GaAs junctions
3. Surface photovoltage and band bending at metal/GaAs interfaces: A contact potential difference and photoemission spectroscopy study
4. Morphological study of Ag, In, Sb, and Bi overlayers on GaAs(100)
5. Au and Al Schottky barrier formation on GaAs (100) surfaces prepared by thermal desorption of a protective arsenic coating
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