Al0.48In0.52As/Ga0.47In0.53As/Al0.48In0.52As double‐heterostructure lasers grown by molecular‐beam epitaxy with lasing wavelength at 1.65 μm
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.329852
Reference12 articles.
1. Solid‐liquid equilibria calculations for LPE of AlvGa1−u−vInuAs on InP
2. Molecular Beam Epitaxial Growth of InP
3. Low‐current‐threshold and high‐lasing uniformity GaAs–AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy
4. Thermal and impulse coupling to an aluminum surface by a pulsed KrF laser
5. The effect of substrate temperature on the current threshold of GaAs‐AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy
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3. High direct energy band gaps determination in In[sub x]Al[sub 1−x]As coherently grown on InP;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2002
4. Electrical and optical characteristics of molecular beam epitaxial Be-doped In0.53Ga0.26Al0.21As layers grown lattice-matched on InP (100) substrates;Materials Science and Engineering: B;1999-06
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