High direct energy band gaps determination in In[sub x]Al[sub 1−x]As coherently grown on InP-Reference-Cited by-同舟云学术

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High direct energy band gaps determination in In[sub x]Al[sub 1−x]As coherently grown on InP

Published:2002 Issue:1 Volume:20 Page:243
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Convertino Annalisa,Padeletti Giuseppina,Cerri Luciana,Viticoli Sesto

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. InxAl1-xAs: critical point energies;New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors;2011

2. Optical properties of InxAl1−xAs alloy films;Applied Physics Letters;2008-04-14

3. Al-As-In (Aluminium-Arsenic-Indium);Non-Ferrous Metal Systems. Part 1;2006

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