Electroluminescence of InAlAs/InGaAs HEMTs lattice-matched to InP substrates-Reference-Cited by-同舟云学术

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Electroluminescence of InAlAs/InGaAs HEMTs lattice-matched to InP substrates

Published:1995-11 Issue:11 Volume:16 Page:515-517
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Shigekawa N.,Enoki T.,Furuta T.,Ito H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/9854/00468285.pdf?arnumber=468285

Cited by 57 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaAs- and InP-based high electron mobility transistors;Reference Module in Materials Science and Materials Engineering;2024

2. Correlation of AlGaN/GaN high-electron-mobility transistors electroluminescence characteristics with current collapse;Applied Physics Express;2018-01-23

3. With electroluminescence microcopy towards more reliable AlGaN/GaN transistors;Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications;2015-08-28

4. Breakdown mechanisms in AlGaN/GaN HEMTs: An overview;Japanese Journal of Applied Physics;2014-09-03

5. Suppressing the 1/fnoise and noise figure of InP-based high electron mobility transistors;Japanese Journal of Applied Physics;2014-03-27

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