Investigation of resistive switching and transport mechanisms of Al2O3/TiO2−x memristors under cryogenic conditions (1.5 K)-Reference-Cited by-同舟云学术

Investigation of resistive switching and transport mechanisms of Al2O3/TiO2−x memristors under cryogenic conditions (1.5 K)

Author:

Beilliard Yann¹²³^ORCID,Paquette François¹²,Brousseau Frédéric¹²,Ecoffey Serge¹²^ORCID,Alibart Fabien¹²⁴,Drouin Dominique¹²³^ORCID

Affiliation:

1. Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, Sherbrooke, Québec J1K 0A5, Canada

2. Laboratoire Nanotechnologies Nanosystèmes (LN2) – CNRS UMI-3463 – 3IT, Sherbrooke, Québec J1K 0A5, Canada

3. Institut Quantique (IQ), Université de Sherbrooke, Sherbrooke, Québec J1K 2R1, Canada

4. Institute of Electronics, Microelectronics and Nanotechnology (IEMN), Université de Lille, 59650 Villeneuve d’Ascq, France

Funder

Natural Sciences and Engineering Research Council of Canada

H2020 Excellent Science

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

Reference49 articles.

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

4. Threshold Voltage based Dual Memristor Crossbar PUF;AEU - International Journal of Electronics and Communications;2024-02