Resistance controllability and variability improvement in a TaOx-based resistive memory for multilevel storage application
Author:
Affiliation:
1. Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 790-784, South Korea
2. Im2np, UMR CNRS 7334, Aix-Marseille Université, Marseille, France
Funder
The work was supported by the POSTECH-Samsung Electronics ReRAM cluster research project
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4922446
Reference18 articles.
1. Metal–Oxide RRAM
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5. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
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