Resistive Memristor Coupled with Multilevel Perpendicular Magnetic States-Reference-Cited by-同舟云学术

Resistive Memristor Coupled with Multilevel Perpendicular Magnetic States

Published:2023-11-14 Issue:11 Volume:5 Page:6315-6323
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Hsin Tzu-Chuan¹,Lin Hung-Yi¹,Lin Yu-Lon¹,Chen Jing-Wen¹,Tseng Yuan-Chieh¹^ORCID

Affiliation:

1. Department of Materials Science & Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan

Funder

National Science and Technology Council

Ministry of Education, Taiwan

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c01179

Reference60 articles.

1. Neuromorphic Computing Using Emerging Synaptic Devices: A Retrospective Summary and an Outlook

2. Shahsavari, M.; Boulet, P. Memristor Nanodevice for Unconventional Computing: Review and Applications, arXiv:1703.00331. arXiv.org e-Print archive https://arxiv.org/abs/1703, 2017.

3. Lee, S. R.; Kim, Y.; Chang, M.; Kim, K. M.; Lee, C. B.; Hur, J. H.; Park, G. S.; Lee, D.; Lee, M.; Lee, M. J.; Kim, C. J.; Kim, C. J.; Chung, U.; Chung, U. I.; Yoo, I.; Yoo, I. K.; Kim, K. Multi-Level Switching of Triple-Layered TaOx RRAM with Excellent Reliability for Storage Class Memory, 2012 Symposium VLSI Technology, 2012; pp 71–72.

4. Resistance controllability and variability improvement in a TaOx-based resistive memory for multilevel storage application

5. Resistive Switching and Synaptic Characteristics in ZnO/TaON-Based RRAM for Neuromorphic System

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Multicolor Fully Light-Modulated Artificial Synapse Based on P-MoSe₂/P_xO_y Heterostructured Memristor;The Journal of Physical Chemistry Letters;2024-08-20

2. Neuromorphic Computing with Emerging Antiferromagnetic Ordering in Spin–Orbit Torque Devices;Nano Letters;2024-06-13

3. Self‐Healing Magnetic Field‐Assisted Threshold Switching Device Utilizing Dual Field‐Driven Filamentary Physics;Advanced Electronic Materials;2024-05-13

4. Neuromorphic Computing with the Ferromagnetic/Antiferromagnetic SOT Systems: The Role of Emerging Antiferromagnetic Phase;2024 IEEE International Magnetic Conference - Short papers (INTERMAG Short papers);2024-05-05

5. Resistive random access memory characteristics of NiO, NiO0.95, and NiO0.95/NiO/NiO0.95 thin films;Journal of the Korean Ceramic Society;2024-03-22