Metal-induced dopant (boron and phosphorus) activation process in amorphous germanium for monolithic three-dimensional integration
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3238297
Reference14 articles.
1. High-performance germanium-seeded laterally crystallized TFTs for vertical device integration
2. Chemical Structure Effects of Ring-Type Siloxane Precursors on Properties of Plasma-Polymerized Porous SiOCH Films
3. Feasibility Study of 45-nm-Node Scaled-Down Cu Interconnects With Molecular-Pore-Stacking (MPS) SiOCH Films
4. Phosphorus and Boron Implantation into (100) Germanium
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