Ultra-Shallow Junction Formation by Monolayer Doping Process in Single Crystalline Si and Ge for Future CMOS Devices-Reference-Cited by-同舟云学术

Ultra-Shallow Junction Formation by Monolayer Doping Process in Single Crystalline Si and Ge for Future CMOS Devices

Published:2017 Issue:5 Volume:6 Page:P350-P355
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Chuang Shang-Shiun,Cho Ta-Chun,Sung Po-Jung,Kao Kuo-Hsing,Chen Henry J. H.,Lee Yao-Jen,Current Michael I.,Tseng Tseung-Yuen

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

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5. Ultra-shallow high-concentration boron profiles for CMOS processing

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