Carrier lifetime studies of deeply penetrating defects in self-ion implanted silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1572469
Reference8 articles.
1. Implantation and transient B diffusion in Si: The source of the interstitials
2. The dose, energy, and time dependence of silicon self‐implantation induced transient enhanced diffusion at 750 °C
3. Size-distribution and annealing behavior of end-of-range dislocation loops in silicon-implanted silicon
4. Trap-Limited Migration of Si Self-Interstitials at Room Temperature
5. Recombination at the interface between silicon and stoichiometric plasma silicon nitride
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