Trap-Limited Migration of Si Self-Interstitials at Room Temperature
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.76.1493/fulltext
Reference19 articles.
1. Point defects and dopant diffusion in silicon
2. Gettering of gold in silicon: A tool for understanding the properties of silicon interstitials
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4. Oxidation enhanced diffusion in Si B‐doping superlattices and Si self‐interstitial diffusivities
5. Silicide formation and the generation of point defects in silicon
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