Atomistic simulations of acceptor removal in p-type Si irradiated with neutrons-Reference-Cited by-同舟云学术

Atomistic simulations of acceptor removal in p-type Si irradiated with neutrons

Published:2022-02 Issue: Volume:512 Page:42-48
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

López Pedro^ORCID,Aboy María^ORCID,Muñoz Irene^ORCID,Santos Iván^ORCID,Marqués Luis A.^ORCID,Fernández-Martínez Pablo^ORCID,Ullán Miguel^ORCID,Pelaz Lourdes

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

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1. Carrier-induced formation of electrically active boron-interstitial clusters in irradiated boron-doped silicon;Journal of Applied Physics;2024-02-01

2. Microscopic origin of the acceptor removal in neutron-irradiated Si detectors - An atomistic simulation study;Acta Materialia;2022-12

3. 5.5 MeV Electron Irradiation-Induced Transformation of Minority Carrier Traps in p-Type Si and Si1−xGex Alloys;Materials;2022-03-02