Recombination at the interface between silicon and stoichiometric plasma silicon nitride
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference36 articles.
1. HITTM cells?high-efficiency crystalline Si cells with novel structure
2. Very low surface recombination velocities on 2.5 Ω cm Si wafers, obtained with low-temperature PECVD of Si-oxide and Si-nitride
3. Record low surface recombination velocities on 1 Ω cm p‐silicon using remote plasma silicon nitride passivation
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