Separating strain from composition in unit cell parameter maps obtained from aberration corrected high resolution transmission electron microscopy imaging
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4862736
Reference16 articles.
1. Investigation of the In composition in InGaN/GaN quantum wells deposited by MOVPE and/or MBE with emission from violet to green
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3. A quantitative procedure to probe for compositional inhomogeneities in InxGa1−xN alloys
4. Composition Fluctuations in InGaN Analyzed by Transmission Electron Microscopy
5. Quantitative analysis of interfacial strain in InAs/GaSb superlattices by aberration-corrected HRTEM and HAADF-STEM
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1. Nanoscale Mapping of the Full Strain Tensor, Rotation, and Composition in Partially Relaxed InxGa1−xN Layers by Scanning X-ray Diffraction Microscopy;Physical Review Applied;2022-12-06
2. Substitutional synthesis of sub-nanometer InGaN/GaN quantum wells with high indium content;Scientific Reports;2021-10-18
3. Role of hole confinement in the recombination properties of InGaN quantum structures;Scientific Reports;2019-06-21
4. Dependence of indium content in monolayer-thick InGaN quantum wells on growth temperature in InxGa1-xN/In0.02Ga0.98N superlattices;Journal of Applied Physics;2018-08-14
5. Metal-organic chemical vapor deposition of N-polar InN quantum dots and thin films on vicinal GaN;Journal of Applied Physics;2018-02-07
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