Dependence of indium content in monolayer-thick InGaN quantum wells on growth temperature in InxGa1-xN/In0.02Ga0.98N superlattices-Reference-Cited by-同舟云学术

Dependence of indium content in monolayer-thick InGaN quantum wells on growth temperature in InxGa1-xN/In0.02Ga0.98N superlattices

Author:

Wolny P.¹²,Anikeeva M.³^ORCID,Sawicka M.¹⁴,Schulz T.³^ORCID,Markurt T.³,Albrecht M.³^ORCID,Siekacz M.¹,Skierbiszewski C.¹⁴

Affiliation:

1. Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland

2. Paul Drude Institute for Solid State Electronics, Hausvogteiplatz 5-7, 10117 Berlin, Germany

3. Leibniz Institute for Crystal Growth, Max-Born Strasse 2, 12489 Berlin, Germany

4. TopGaN Sp. z o.o., Sokolowska 29/37, 01-142 Warsaw, Poland

Funder

H2020 Marie Skłodowska-Curie Actions

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

Reference34 articles.

1. H. Morkoç , General Properties of Nitrides, Handbook of Nitride Semiconductors and Devices ( Wiley-VCH Verlag GmbH & Co. KGaA, 2009), pp. 1–129.

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