Influence of Mg doping on In adsorption and In incorporation in (In,Ga)N superlattices-Reference-Cited by-同舟云学术

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Influence of Mg doping on In adsorption and In incorporation in (In,Ga)N superlattices

Published:2020-08-28 Issue:8 Volume:128 Page:085303
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kuşdemir Erdi¹^ORCID,Chèze Caroline¹^ORCID,Calarco Raffaella¹²^ORCID

Affiliation:

1. Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany

2. Consiglio nazionale delle ricerche - CNR Institute for Microelectronics and Microsystems-IMM, Via del Fosso del Cavaliere, 100, 00133 Rome, Italy

Funder

Horizon 2020 Framework Programme

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0017520

Reference40 articles.

1. Revealing of the transition from n- to p-type conduction of InN:Mg by photoconductivity effect measurement

2. Doping of III-nitride materials

3. First-principles calculations for defects and impurities: Applications to III-nitrides

4. Reproducible increased Mg incorporation and large hole concentration in GaN using metal modulated epitaxy

5. Origin of high hole concentrations in Mg‐doped GaN films

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hole Conduction Mechanism in In–Mg‐Codoped GaN Prepared via Pulsed Sputtering Deposition;physica status solidi (a);2024-03-12

2. Mapping the growth of p-type GaN layer under Ga-rich and N-rich conditions at low to high temperatures by plasma-assisted molecular beam epitaxy;Applied Physics Letters;2020-12-21

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