Revealing of the transition from n- to p-type conduction of InN:Mg by photoconductivity effect measurement
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep04371.pdf
Reference24 articles.
1. Rinke, P. et al. Consistent set of band parameters for the group-III nitrides AlN, GaN and InN. Phys. Rev. B 77, 075202 (2008).
2. Wu, J. et al. Temperature dependence of the fundamental band gap of InN. J. Appl. Phys. 94, 4457 (2003).
3. Jani, O. et al. Design and characterization of GaN/InGaN solar cells. Appl. Phys. Lett. 91, 132117 (2007).
4. Lu, H. et al. Growth of a-plane InN on r-plane sapphire with a GaN buffer by molecular-beam epitaxy. Appl. Phys. Lett. 83, 1136–1138 (2003).
5. Nanishi, Y. et al. RF-Molecular Beam Epitaxy growth and properties of InN and related alloys. Jpn. J. Appl. Phys. 42, 2549–2559 (2003).
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