Origin of high hole concentrations in Mg‐doped GaN films
Author:
Affiliation:
1. Department of PhysicsArizona State UniversityTempeAZ 85287‐1504USA
2. Advanced Semiconductor Technology FacilitySchool of Electrical and Computer EngineeringGeorgia Institute of TechnologyAtlantaGA 30332USA
Funder
National Science Foundation
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201600668
Reference37 articles.
1. Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED
2. On p‐type doping in GaN—acceptor binding energies
3. Activation of acceptors in Mg‐doped GaN grown by metalorganic chemical vapor deposition
4. Mg‐doped p‐type GaN grown by reactive molecular beam epitaxy
5. Violet luminescence of Mg‐doped GaN
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