Mapping the growth of p-type GaN layer under Ga-rich and N-rich conditions at low to high temperatures by plasma-assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

Mapping the growth of p-type GaN layer under Ga-rich and N-rich conditions at low to high temperatures by plasma-assisted molecular beam epitaxy

Published:2020-12-21 Issue:25 Volume:117 Page:254104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sadaf Sharif Md.¹²^ORCID,Tang Haipeng²

Affiliation:

1. Centre Energie, Matériaux et Télécommunications, Institut National de la Recherche Scientifique (INRS), 1650 Boulevard Lionel-Boulet, Varennes, Quebec J3X 1S2, Canada

2. National Research Council, Ottawa, Ontario K1A 0R6, Canada

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0029517

Reference39 articles.

1. p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si

2. Influence of Mg doping on In adsorption and In incorporation in (In,Ga)N superlattices

3. GaN-Based RF Power Devices and Amplifiers

4. True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy

5. Mg doping of GaN grown by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions

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