Transient-enhanced diffusion of boron implanted at ultralow energies in silicon: Localization of the source
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126578
Reference12 articles.
1. Shallow junction doping technologies for ULSI
2. Low Energy Implantation and Transient Enhanced Diffusion: Physical Mechanisms and Technology Implications
3. Atomic transport properties and electrical activation of ultra-low energy implanted boron in crystalline silicon
4. Microscopical aspects of boron diffusion in ultralow energy implanted silicon
5. Diffusion of boron in silicon during post‐implantation annealing
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1. Ion Implantation Defects and Shallow Junctions in Si and Ge;Semiconductors and Semimetals;2015
2. Injection of point defects during annealing of low energy As implanted silicon;Materials Science and Engineering: B;2005-12
3. Ultra-low energy ion implantation of boron for future silicon devices;Current Opinion in Solid State and Materials Science;2002-02
4. Redistribution and electrical activation of ultralow energy implanted boron in silicon following laser annealing;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2002
5. Ultrashallow profiling of semiconductors by secondary ion mass spectrometry:;Materials Science in Semiconductor Processing;2001-02
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