Air-void embedded GaN-based light-emitting diodes grown on laser drilling patterned sapphire substrates-Reference-Cited by-同舟云学术

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Air-void embedded GaN-based light-emitting diodes grown on laser drilling patterned sapphire substrates

Published:2016-07 Issue:7 Volume:6 Page:075016
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Funder

National High Technology Research and Developement Program of China

The XJTU Key Laboratory for Mechanical Behavior of Material

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4959894

Reference24 articles.

1. High dislocation densities in high efficiency GaN‐based light‐emitting diodes

2. On the origin of threading dislocations in GaN films

3. Influence of defect reduction and strain relaxation on carrier dynamics in InGaN-based light-emitting diodes on cone-shaped patterned sapphire substrates

4. Threading-dislocation blocking by stacking faults formed in an undoped GaN layer on a patterned sapphire substrate

5. Enhancement of the light output power of InGaN/GaN light-emitting diodes grown on pyramidal patterned sapphire substrates in the micro- and nanoscale

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Excitation-dependent spatially resolved photoluminescence in InGaN/GaN LEDs with air-cavity arrays grown on patterned sapphire substrates;Optical Materials Express;2022-11-04

2. Wet-etching mechanism of a semi-sphere pattern on sapphire substrate;Materials Chemistry and Physics;2022-04

3. Morphological effect of patterned sapphire substrate on efficiency of white-light phosphor LED package;Optical Materials;2021-09

4. Review of lateral epitaxial overgrowth of buried dielectric structures for electronics and photonics;Progress in Quantum Electronics;2021-05

5. Formation Mechanism of Self-Formed Triangular Pyramidal Patterns on Sapphire Substrate;Crystal Growth & Design;2020-06-04

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