Threading-dislocation blocking by stacking faults formed in an undoped GaN layer on a patterned sapphire substrate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3658451
Reference22 articles.
1. Heteroepitaxial wurtzite and zinc‐blende structure GaN grown by reactive‐ion molecular‐beam epitaxy: Growth kinetics, microstructure, and properties
2. Structural Defects and Their Relationship to Nucleation of Gan Thin Films
3. Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy
4. Pendeoepitaxy of gallium nitride thin films
5. Maskless epitaxial lateral overgrowth of GaN layers on structured Si(111) substrates
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