Maskless epitaxial lateral overgrowth of GaN layers on structured Si(111) substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1347013
Reference10 articles.
1. High Quality GaN Layers Grown by Metalorganic Chemical Vapor Deposition on Si(111) Substrates
2. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
3. Pendeoepitaxy of gallium nitride thin films
4. Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
5. Single step process for epitaxial lateral overgrowth of GaN on SiC and sapphire substrates
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