Single step process for epitaxial lateral overgrowth of GaN on SiC and sapphire substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125467
Reference8 articles.
1. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
2. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
3. Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy
4. Flow Modulation Epitaxial Lateral Overgrowth Of Gallium Nitride On Masked 6H-Silicon Carbide And Sapphire Surfaces
5. AlGaN/GaN heterostructures on insulating AlGaN nucleation layers
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1. Heat Treatment of Carbonized Photoresist Mask with Ammonia for Epitaxial Lateral Overgrowth of a-plane GaN on R-plane Sapphire;Korean Journal of Materials Research;2018-04-30
2. Strain reduction and crystal improvement of an InGaN/GaN quantum-well light-emitting diode on patterned Si (110) substrate;Applied Physics Letters;2013-09-30
3. Structural Properties of Heterostructures;Graduate Texts in Physics;2013
4. Study ofa-Plane GaN Epitaxial Lateral Overgrowth Using Carbonized Photoresist Mask onr-Plane Sapphire;Japanese Journal of Applied Physics;2012-11-01
5. Study of $a$-Plane GaN Epitaxial Lateral Overgrowth Using Carbonized Photoresist Mask on $r$-Plane Sapphire;Japanese Journal of Applied Physics;2012-10-26
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