Selective Area Growth of GaN Using Polycrystalline γ-Alumina as a Mask for Discrete Micro-GaN Array-Reference-Cited by-同舟云学术

Selective Area Growth of GaN Using Polycrystalline γ-Alumina as a Mask for Discrete Micro-GaN Array

Published:2022-02-04 Issue:3 Volume:22 Page:1770-1777
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Oh Jehong¹,Ryu Jungel¹,Yang Duyoung¹,Lee Seungmin¹,Kim Jongmyeong¹,Hwang Kyungwook²,Hwang Junsik²,Kim Dongho²,Park Yongjo³,Yoon Euijoon⁴,Jang Ho Won¹³⁵^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Korea

2. Samsung Advanced Institute of Technology, Suwon 16678, Korea

3. Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Korea

4. Korea Institute of Energy Technology, Naju 58330, Korea

5. Advanced Institute of Convergence Technology, Seoul National University, Suwon 16229, Korea

Funder

Samsung Advanced Institute of Technology

National Research Foundation of Korea

Korea Evaluation Institute of Industrial Technology

Samsung Research Funding and Incubation Center of Samsung Electronics

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.1c01363

Reference35 articles.

1. Micro-LEDs, a Manufacturability Perspective

2. III‐Nitride Micro‐LEDs for Efficient Emissive Displays

3. Beyond solid-state lighting: Miniaturization, hybrid integration, and applications of GaN nano- and micro-LEDs

4. Review—On The Search for Efficient Solid State Light Emitters: Past, Present, Future

5. Review—Progress in High Performance III-Nitride Micro-Light-Emitting Diodes

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