Wet-etching mechanism of a semi-sphere pattern on sapphire substrate
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference23 articles.
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3. interfaces, High-quality GaN epilayers achieved by facet-controlled epitaxial lateral overgrowth on sputtered AlN/PSS templates;He;ACS Appl. Mater. Interfaces,2017
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Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Combined polishing process of a sapphire aspherical component based on temperature-controlled magnetorheological processing;Applied Optics;2023-01-19
2. Fabrication of microstructures in the bulk and on the surface of sapphire by anisotropic selective wet etching of laser-affected volumes;Journal of Micromechanics and Microengineering;2022-10-25
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