High-Quality GaN Epilayers Achieved by Facet-Controlled Epitaxial Lateral Overgrowth on Sputtered AlN/PSS Templates
Author:
Affiliation:
1. Guangdong Institute of Semiconductor Industrial Technology, Guangdong Academy of Sciences, Guangzhou 510650, China
2. School of Physics & Electronic Engineering, Guangzhou University, Guangzhou 510006, China
Funder
National Natural Science Foundation of China
Chinese Academy of Sciences
Guangzhou Province
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.7b14801
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