Formation Mechanism of Self-Formed Triangular Pyramidal Patterns on Sapphire Substrate
Author:
Affiliation:
1. Department of Chemical Engineering and Materials Engineering, National Central University, Taoyuan City 32001, Taiwan
Funder
Ministry of Science and Technology, Taiwan
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.0c00584
Reference20 articles.
1. High-Quality GaN Epilayers Achieved by Facet-Controlled Epitaxial Lateral Overgrowth on Sputtered AlN/PSS Templates
2. Fabrication of oxide-based nano-patterned sapphire substrate to improve the efficiency of GaN-based of LED
3. Air-void embedded GaN-based light-emitting diodes grown on laser drilling patterned sapphire substrates
4. Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes
5. Study on Dislocation Annihilation Mechanism of the High-Quality GaN Grown on Sputtered AlN/PSS and Its Application in Green Light-Emitting Diodes
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1. Continuous Making, Stretch Breaking, and Exciton Dynamics of a Red-Emissive Organic Submicrometer-Sized Triangular Pyramid;The Journal of Physical Chemistry C;2023-04-24
2. Dislocation Etching Morphology on the A Plane of Sapphire Crystal;Crystal Research and Technology;2021-06-12
3. Etching Behaviors of Sapphire's C- Plane Cavity;Surface Science;2021-05
4. Cavity etching evolution on the A-plane of sapphire crystal in molten KOH etchant;Journal of Crystal Growth;2020-12
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