Dislocation Etching Morphology on the A Plane of Sapphire Crystal-Reference-Cited by-同舟云学术

Dislocation Etching Morphology on the A Plane of Sapphire Crystal

Published:2021-06-12 Issue:9 Volume:56 Page:2100022
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Crystal Research and Technology

Author:

Cao Fuyang¹,Li Fei¹,Yuan Zhiyong¹,Zhang Lunyong¹^ORCID,Jiang Sida¹,Shen Hongxian¹,Ning Zhiliang¹,Huang Yongjiang¹,Xing Dawei¹,Zuo Hongbo²,Han Jiecai²,Sun Jianfei¹

Affiliation:

1. School of Materials Science and Engineering Harbin Institute of Technology Harbin 150001 P. R. China

2. Center for Composite Materials Harbin Institute of Technology Harbin 150001 P. R. China

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/crat.202100022

Reference26 articles.

1. Sapphire shaped crystals for waveguiding, sensing and exposure applications

2. World׳s largest sapphire for many applications

3. Formation Mechanism of Self-Formed Triangular Pyramidal Patterns on Sapphire Substrate

4. Determination of dislocation density in GaN/sapphire layers using XRD measurements carried out from the edge of the sample

5. Effect of stacking fault nanolayers on the photoluminescence properties of SiC nanowires

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3. Molten Barium Hydroxide as Defect Selective Drop Etchant for Dislocation Analysis on Aluminum Nitride Layers;physica status solidi (a);2022-02-03