An accurate determination of the electronic transitions of InAs/InGaAs/InP quantum dots for midinfrared lasers using simultaneous complementary spectroscopic techniques-Reference-Cited by-同舟云学术

An accurate determination of the electronic transitions of InAs/InGaAs/InP quantum dots for midinfrared lasers using simultaneous complementary spectroscopic techniques

Published:2008-10-15 Issue:8 Volume:104 Page:083109
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Sharma T. K.,Hosea T. J. C.,Sweeney S. J.,Tang X.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3005903

Reference34 articles.

1. Photoreflectance spectroscopy of self-organized InAs/InP(001) quantum sticks emitting at 1.55μm

2. Strong carrier confinement and evidence for excited states in self-assembled InAs quantum islands grown on InP(001)

3. Multi-Stacked InAs/InGaAs/InP Quantum Dot Laser (Jth=11A/cm2, λ=1.9µm (77 K))

4. A review of energy bandgap engineering in III–V semiconductor alloys for mid-infrared laser applications

5. Effects of InxGa1−xAs matrix layer on InAs quantum dot formation and their emission wavelength

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