Effects of InxGa1−xAs matrix layer on InAs quantum dot formation and their emission wavelength
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2220477
Reference21 articles.
1. A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates
2. Characterization of InAs quantum dots in strained In[sub x]Ga[sub 1−x]As quantum wells
3. Strain engineering of self-organized InAs quantum dots
4. Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer
5. Effect of InGaAs capping layer on the properties of InAs/InGaAs quantum dots and lasers
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2. Investigation of GaInAs strain reducing layer combined with InAs quantum dots embedded in Ga(In)As subcell of triple junction GaInP/Ga(In)As/Ge solar cell;Nanoscale Research Letters;2015-03-07
3. InP Based Quantum Dots for Long Wavelength Emissions and Their Post-Growth Bandgap Tuning;J NANOELECTRON OPTOE;2015
4. MOVPE GROWTH OF THE InP BASED MID-IR EMISSION QUANTUM DOT STRUCTURES;Journal of Molecular and Engineering Materials;2013-06
5. Mid-infrared emissive InAsSb quantum dots grown by metal–organic chemical vapor deposition;CrystEngComm;2013
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