Multi-Stacked InAs/InGaAs/InP Quantum Dot Laser (Jth=11A/cm2, λ=1.9µm (77 K))-Reference-Cited by-同舟云学术

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Multi-Stacked InAs/InGaAs/InP Quantum Dot Laser (Jth=11A/cm2, λ=1.9µm (77 K))

Published:1999-01-30 Issue:Part 1, No. 1B Volume:38 Page:601-604
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Zaitsev Sergey V.,Gordeev Nikita,Kopchatov Vladimir I.,Ustinov Victor M.,Zhukov Alexey E.,Egorov Anton,Kovsh Alexey R.,Kop'ev Peter S.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of lithium ion implantation on the luminescence properties of InAs/GaAs quantum dots;SPIE Proceedings;2016-09-26

2. 1.5 μm InAs/InGaAsP/InP quantum dot laser with improved temperature stability;Journal of Physics: Conference Series;2016-08

3. Effect of heavy ion implantation on self-assembled single layer InAs/GaAs quantum dots;Journal of Physics D: Applied Physics;2010-12-01

4. What Is the Longest Lasing Wavelength of InAs/InP (100) Quantum Dots Grown by Metal Organic Vapor Phase Epitaxy?;Applied Physics Express;2010-06-25

5. A Method of Obtaining Simultaneous Complementary Spectroscopic Information on Self-Assembled Quantum Dots;Japanese Journal of Applied Physics;2009-08-20

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