1.5 μm InAs/InGaAsP/InP quantum dot laser with improved temperature stability
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/741/i=1/a=012109/pdf
Reference7 articles.
1. The role of Auger recombination in the temperature-dependent output characteristics (T0=∞) of p-doped 1.3 μm quantum dot lasers
2. Multi-Stacked InAs/InGaAs/InP Quantum Dot Laser (Jth=11A/cm2, λ=1.9µm (77 K))
3. Room-Temperature Operation of InP-Based InAs Quantum Dot Laser
4. Recent Advances on InAs/InP Quantum Dash Based Semiconductor Lasers and Optical Amplifiers Operating at 1.55 $\mu$m
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1. Modeling Electronic and Optical Properties of InAs/InP Quantum Dots;Photonics;2024-08-10
2. Towards InAs/InP Quantum-Dash Laser-Based Ultra-High Capacity Heterogeneous Optical Networks: A Review;IEEE Access;2022
3. 155 µm electrically pumped continuous wave lasing of quantum dash lasers grown on silicon;Optics Express;2020-06-03
4. 1.5μm quantum-dot diode lasers directly grown on CMOS-standard (001) silicon;Applied Physics Letters;2018-11-26
5. Growth and optical characteristics of InAs quantum dot structures with tunnel injection quantum wells for 1.55 μm high-speed lasers;Journal of Crystal Growth;2018-06
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