What Is the Longest Lasing Wavelength of InAs/InP (100) Quantum Dots Grown by Metal Organic Vapor Phase Epitaxy?
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/3/i=7/a=072101/pdf
Reference13 articles.
1. Lasers and photodetectors for mid-infrared 2–3 μm applications
2. Near- and mid-infrared laser-optical sensors for gas analysis
3. Stacking, polarization control, and lasing of wavelength tunable (1.55μm region) InAs/InGaAsP/InP (100) quantum dots
4. Effect of metal organic vapor phase epitaxy growth conditions on emission wavelength stability of 1.55μm quantum dot lasers
5. First demonstration of single-layer InAs/InP (100) quantum-dot laser: continuous wave, room temperature, ground state
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1. Electronic Band Structure and Material Gain of Dilute Nitride Quantum Wells Grown on InP Substrate;IEEE Journal of Quantum Electronics;2015-05
2. Self-Assembly in Semiconductor Epitaxy;Handbook of Crystal Growth;2015
3. Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices;Progress in Quantum Electronics;2014-11
4. The developments of InP-based quantum dot lasers;Infrared Physics & Technology;2013-09
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