Stacking, polarization control, and lasing of wavelength tunable (1.55μm region) InAs/InGaAsP/InP (100) quantum dots-Reference-Cited by-同舟云学术

Stacking, polarization control, and lasing of wavelength tunable (1.55μm region) InAs/InGaAsP/InP (100) quantum dots

Published:2007-01 Issue: Volume:298 Page:553-557
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Anantathanasarn S.,Nötzel R.,van Veldhoven P.J.,van Otten F.W.M.,Eijkemans T.J.,Barbarin Y.,de Vries T.,Smalbrugge E.,Geluk E.J.,Bente E.A.J.M.,Oei Y.S.,Smit M.K.,Wolter J.H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference11 articles.

1. Multidimensional quantum well laser and temperature dependence of its threshold current

2. Effects of As/P exchange reaction on the formation of InAs/InP quantum dots

3. Fabrication of InAs quantum dots on InP(100) by metalorganic vapor-phase epitaxy for 1.55 μm optical device applications

4. Wavelength tuning of InAs quantum dots grown on InP (100) by chemical-beam epitaxy

5. Wavelength-tunable (1.55‐μm region) InAs quantum dots in InGaAsP∕InP (100) grown by metal-organic vapor-phase epitaxy

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